InGaAs APD-PIN Module

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1 PIN-FET - High Sensitivity PIN-FET Receiver ModuleHigh Sensitivity PIN-FET Receiver Module( Transimpedance: 10-1200Kohms, ,dynanmic range: 25dB, package: 14pins/8 pins)
＄444.44
2 RSAPD - InGaAs APD-PIN ModuleInGaAs APD-PIN Module
＄122.00

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Features:

InGaAs planar APD structure

55um top-illuminated active area

Low dard current

Low capacitance

High reliability

Application:

Optical receivers up to 2.5Gb/s

If you need further more information ,please contact Sales@oelabs.com.

Absolute maximum ratings:

Parameter	Symbol	Value	Unit
Storage temperature	Tst	-40~+100	°C
Operating temperature	Top	-40~+85	°C
APD voltage	VR	Vbr	V
Soldering temperature/time	—	260/10	°C/ s

Optical & electrical characteristics(T=25℃)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Active area

55

um

R

Responsivity

λ=1310nm，M=1

0.75

0.9

-

A/W

λ=1550nm，M=1

0.9

1.05

-

Vb

Breakdown voltage

Id=10uA

40

50

60

V

Id

Dark current

Vr=0.9Vb

10

50

nA

C

Capacitance

f=1MHz，Vr=0.9Vb

0.38

0.5

pF

Mmax

Maximum
multiplication factor

λ=1310nm,1550nm, Ipo=2uA，Vr=V@Id=1uA

25

fc

Cutoff frequency

M=10

2.0

GHz

Temperature coefficient of Vb

0.09

V/°C

RL

Return loss

λ=1310nm

45

dB

PIN assignment