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OEST-ABC-L - SiC-based UV photodiode
 
   
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OEST-ABC-L - SiC-based UV photodiode

SiC-based UV photodiode

  • Product Code:OEST-ABC-L
  • Item:OEST-ABC-L


 

 

If you need further more information ,please contact Sales@oelabs.com.

General Features:

  • Highly reliable, Gain-switching seed laser
  • Broad band UVA+UVB+UVC photodiode
  • Photovoltaic mode operation
  • TO-46 metal housing
  • Good visible blindness
  • High responsivity and low dark current

Specification

Parameters

Symbol

Value

Unit

Maximum ratings

Operation temperature range

Topt

-25-100

︒C

Storage temperature range

Tsto

-40-100

︒C

Soldering temperature (3 s)

Tsol

260

︒C

Reverse voltage

Vr-max

-20

V

General characteristics(25℃)

Chip size

A

1

mm2

Dark current (Vr =-5 V)

Id

<0.1

nA

Photo current (1 mW/cm2 at 280 nm)

Iph

1100

nA

Temperature coefficient

Tc

-0.1

%/︒C

Capacitance (at 0 V and 1 MHz)

Cp

76

pF

Spectral response characteristics (25 )

 

 

 

Wavelength of peak responsivisity

Λp

280

Nm

Peak responsivisity (at 280 nm)

Rmax

0.13

A/W

Spectral response range (R=0.1×Rmax) 

-

215-360

Nm

UV-visible rejection ratio (Rmax/R400 nm)

-

>105

-

 

 

 

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